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| INCHANGE Semiconductor isc Product Specification isc Silicon NPNPower Transistor 2SD726 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO = 80V(Min) *High Power Dissipation *Complement to Type 2SB690 APPLICATIONS *Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE 100 80 5 4 8 40 UNIT .cn mi e V V V A A IC Collector Current-Continuous ICM Collector Current-Peak Total Power Dissipation @ TC=25 Junction Temperature PC W TJ 150 Tstg Storage Temperature Range -45~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPNPower Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS IC= 50mA; RBE= MIN TYP. 2SD726 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10A; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A B 2.0 V VBE(on) ICBO Base-Emitter On Voltage IC= 1A; VCE= 5V VCB= 80V; IE= 0 1.5 V Collector Cutoff Current 0.1 mA hFE-1 DC Current Gain IC= 1A; VCE= 5V hFE-2 DC Current Gain COB Collector Output Capacitance fT Current-Gain--Bandwidth Product hFE-1 Classifications B 60-120 C w ww scs .i IC= 0.1A; VCE= 5V IE= 0; VCB= 20V; f= 1MHz IC= 0.5A; VCE= 5V .cn mi e 60 35 200 40 pF 10 MHz 100-200 isc Websitewww.iscsemi.cn 2 |
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